Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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Daudz. RoHS
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datu lapa
88Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 1

ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 419Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 7

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Datu lapa
4 274Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Maks.: 1 465
Rullis: 2 500

ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM
Datu lapa
539Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 5


ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS
Datu lapa
1 611Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Maks.: 2
Rullis: 1 000

ISSI SRAM Pseudo SRAM 64Mb
Datu lapa
2 170Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 127

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp
Datu lapa
285Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 12

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS
Datu lapa
310Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS
Datu lapa
480Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
Datu lapa
1 733Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 28

ISSI IS66WVE4M16EALL-70BLI
ISSI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
Datu lapa
867Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 6

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Datu lapa
308Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 16

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Datu lapa
885Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 37

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Datu lapa
656Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 121

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Datu lapa
1 887Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datu lapa
817Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 353

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datu lapa
174Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 13

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Datu lapa
455Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 32

ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datu lapa
148Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 24

ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datu lapa
159Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 15

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Datu lapa
4 821Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Maks.: 491
Rullis: 2 500

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Datu lapa
959Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Datu lapa
1 601Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 719

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Datu lapa
3 104Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Maks.: 38
Rullis: 2 500