3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.

Rezultāti: 86
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Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Tips
Atmiņas lielums
Datu kopnes platums
Maksimālā takts frekvence
Iepakojums / korpusa
Organizācija
Piekļuves laiks
Barošanas spriegums - min.
Barošanas spriegums - maks.
Minimālā darba temperatūra
Maksimālā darba temperatūra
Sērija
Iepakojums
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
Datu lapa
668Ir noliktavā
348Paredzamais 20.04.2026
Min.: 1
Vair.: 1
Maks.: 188

SDRAM 64 Mbit 16 bit 166 MHz BGA-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm) RoHS
Datu lapa
696Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 64 Mbit 16 bit 166 MHz BGA-54 4 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 143 Mhz, 54 ball BGA (8mmx8mm) RoHS
Datu lapa
343Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 64 Mbit 16 bit 143 MHz BGA-54 4 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS
Datu lapa
168Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 58

SDRAM 64 Mbit 32 bit 166 MHz TSOP-II-86 2 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS
Datu lapa
239Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 64 Mbit 32 bit 143 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
Datu lapa
6 211Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 182

SDRAM 256 Mbit 32 bit 143 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM 256M 16Mx16 143Mhz SDR SDRAM, 3.3V
Datu lapa
3 442Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 95

SDRAM 256 Mbit 16 bit 143 MHz BGA-54 16 M x 16 5.5 ns 3 V 3.6 V - 40 C + 85 C IS42S16160G Tray
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin Copper TSOP II (400 mil) RoHS
Datu lapa
785Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 79

SDRAM 512 Mbit 16 bit 167 MHz TSOP-II-54 32 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16320F
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT
Datu lapa
670Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 265

SDRAM 512 Mbit 16 bit 167 MHz TSOP-II-54 32 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16320F
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II, RoHS, IT
Datu lapa
237Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 16

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS, IT
Datu lapa
1 035Ir noliktavā
864Paredzamais 24.04.2026
Min.: 1
Vair.: 1
Maks.: 869

SDRAM 256 Mbit 32 bit 166 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 166Mhz,RoHS
Datu lapa
2 669Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 1 298

SDRAM 16 Mbit 16 bit 166 MHz TSOP-II-50 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16100H
ISSI DRAM 256M 16Mx16 166MHz SDR SDRAM, 3.3V
Datu lapa
766Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 253

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160G Tray
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 143MHz, 54 ball BGA (8mmx8mm) RoHS, IT
Datu lapa
323Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 256 Mbit 8 bit 143 MHz BGA-54 32 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S83200G Tray
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm)
Datu lapa
237Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800G Tray
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS
Datu lapa
3 712Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 16 Mbit 16 bit 143 MHz BGA-60 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16100H
ISSI DRAM 256M 16Mx16 143MHz SDR SDRAM, 3.3V
Datu lapa
2 926Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 112

SDRAM 256 Mbit 16 bit 143 MHz TSOP-II-54 16 M x 16 5.5 ns 3 V 3.6 V 0 C + 70 C IS42S16160G Tray
ISSI DRAM 32Mb 2Mx16 133MHz Mobile SDRAM
Datu lapa
982Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM Mobile 32 Mbit 16 bit 133 MHz BGA-54 2 M x 16 5.5 ns 2.7 V 3.6 V - 40 C + 85 C IS42SM16200D Tray
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 166MHz, 54 pin TSOP II (400 mil) RoHS
Datu lapa
87Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 256 Mbit 8 bit 166 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IS42S83200J
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 166MHz, 54 pin TSOP II (400 mil) RoHS, IT
Datu lapa
119Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 5

SDRAM 256 Mbit 8 bit 166 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S83200J
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 166Mhz,RoHS
Datu lapa
106Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 15

SDRAM 16 Mbit 16 bit 166 MHz BGA-60 1 M x 16 3 V 3.6 V - 40 C + 85 C IS42S16100H
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 143MHz, 54 pin TSOP II (400 mil) RoHS
Datu lapa
81Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 18

SDRAM 256 Mbit 8 bit 143 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IS42S83200J
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 166Mhz,RoHS
Datu lapa
67Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 16 Mbit 16 bit 166 MHz TSOP-II-50 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16100H
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS
Datu lapa
14Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM 16 Mbit 16 bit 143 MHz BGA-60 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16100H
ISSI DRAM 256M 16Mx16 166Mhz SDR SDRAM, 3.3V
Datu lapa
241Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 16

SDRAM 256 Mbit 16 bit 166 MHz BGA-54 16 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160G Tray