CoolSiC™ G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.

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Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 102Ir noliktavā
1 350Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22 N-Channel
Infineon Technologies SiC MOSFET CoolSiC Automotive Power Device 750 V G2 1 361Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22 N-Channel
Infineon Technologies SiC MOSFET CoolSiC Automotive Power Device 750 V G2 714Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22 N-Channel
Infineon Technologies SiC MOSFET CoolSiC Automotive Power Device 750 V G2 488Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22 N-Channel
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 723Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 751Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22 N-Channel
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 717Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 800

SiC MOSFETS SiC SMD/SMT HDSOP-16 N-Channel
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 800Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

SiC MOSFETS TOLL-8
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 676Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

SiC MOSFETS SiC SMD/SMT LHSOF-4 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 134Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22 N-Channel
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 86Ir noliktavā
240Pēc pasūtījuma
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-3 N-Channel
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 218Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 149Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 3 548Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 1 750Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 1 143Ir noliktavā
960Paredzamais 06.08.2026
Min.: 1
Vair.: 1

MOSFETs Si Through Hole TO-247-3 N-Channel
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 1 146Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 548Ir noliktavā
2 000Paredzamais 06.08.2026
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 433Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 700Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 437Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 611Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 731Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 435Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 5 749Ir noliktavā
3 000Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel