600V Single N-Channel Power MOSFETs

Taiwan Semiconductor 600V Single N-channel power MOSFETs incorporate super-junction technology and operate within the -55°C to 150°C temperature range. These MOSFETs are Pb-free, RoHS-compliant, and halogen-free. Typical applications include lighting, industrial, and switching applications.

Rezultāti: 29
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 Raž.
Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Iepakojums
Taiwan Semiconductor MOSFET 600V, 11A, Single N-Channel Power MOSFET
Datu lapa
3 990Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole ITO-220-3 N-Channel 1 Channel 600 V 11 A 390 mOhms - 20 V, 20 V 5 V 21.3 nC - 55 C + 150 C 78 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 3A, Single N-Channel Power MOSFET
Datu lapa
3 658Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 3 A 1.5 Ohms - 20 V, 20 V 4.3 V 7.6 nC - 55 C + 150 C 39 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 3A, Single N-Channel Power MOSFET
Datu lapa
5 000Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3 A 1.5 Ohms - 20 V, 20 V 5.5 V 8.1 nC - 55 C + 150 C 55 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 600V, 11A, Single N-Channel Power MOSFET
Datu lapa
4 990Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11 A 390 mOhms - 20 V, 20 V 5 V 21 nC - 55 C + 150 C 125 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 600V, 61A, Single N-Channel High Voltage MOSFET
Datu lapa
300Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61 A 48 mOhms - 30 V, 30 V 6 V 114 nC - 55 C + 150 C 431 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 51A, Single N-Channel High Voltage MOSFET
Datu lapa
300Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 51 A 69 mOhms - 30 V, 30 V 6 V 86 nC - 55 C + 150 C 417 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 42A, Single N-Channel High Voltage MOSFET
Datu lapa
290Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 42 A 84 mOhms - 30 V, 30 V 6 V 68 nC - 55 C + 150 C 357 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 14.5A, Single N-Channel High Voltage MOSFET
Datu lapa
1 981Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 14.5 A 145 mOhms - 30 V, 30 V 6 V 40 nC - 55 C + 150 C 69 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 13A, Single N-Channel High Voltage MOSFET
Datu lapa
1 988Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 13 A 180 mOhms - 30 V, 30 V 6 V 34 nC - 55 C + 150 C 63 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 12A, Single N-Channel High Voltage MOSFET
Datu lapa
1 984Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 12 A 200 mOhms - 30 V, 30 V 6 V 30 nC - 55 C + 150 C 63 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 9.5A, Single N-Channel High Voltage MOSFET
Datu lapa
1 985Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 9.5 A 285 mOhms - 30 V, 30 V 6 V 22 nC - 55 C + 150 C 56 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 7A, Single N-Channel Power MOSFET
Datu lapa
3 878Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole ITO-220-3 N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 7A, Single N-Channel Power MOSFET
Datu lapa
7 500Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 620 mOhms - 20 V, 20 V 5 V 15 nC - 55 C + 150 C 78 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 600V, 4A, Single N-Channel Power MOSFET
Datu lapa
4 394Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFET 600V, 7A, Single N-Channel Power MOSFET
Datu lapa
2 747Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 7 A 620 mOhms - 20 V, 20 V 5 V 15 nC - 55 C + 150 C 78 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 4A, Single N-Channel Power MOSFET
Datu lapa
3 747Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 14A, Single N-Channel High Voltage MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 12 Nedēļas
Min.: 2 000
Vair.: 2 000
Rullis: 2 000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 14 A 165 mOhms 20 V, 30 V 5 V 48 nC - 55 C + 150 C 81 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 14A, Single N-Channel High Voltage MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 12 Nedēļas
Min.: 2 000
Vair.: 2 000
Rullis: 2 000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 14 A 165 mOhms 20 V, 30 V 5 V 48 nC - 55 C + 150 C 81 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 12A, Single N-Channel High Voltage MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 12 Nedēļas
Min.: 2 000
Vair.: 2 000
Rullis: 2 000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 12 A 165 mOhms 20 V, 30 V 5 V 42 nC - 55 C + 150 C 74 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 12A, Single N-Channel High Voltage MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 12 Nedēļas
Min.: 2 000
Vair.: 2 000
Rullis: 2 000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 12 A 196 mOhms 20 V, 30 V 5 V 42 nC - 55 C + 150 C 74 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 24A, Single N-Channel High Voltage MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 40 Nedēļas
Min.: 4 000
Vair.: 2 000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 24 A 69 mOhms - 30 V, 30 V 6 V 89 nC - 55 C + 150 C 89 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 21A, Single N-Channel High Voltage MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 40 Nedēļas
Min.: 4 000
Vair.: 2 000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 21 A 84 mOhms - 30 V, 30 V 6 V 69 nC - 55 C + 150 C 83 W Enhancement Tube
Taiwan Semiconductor MOSFET 600V, 47A, Single N-Channel High Voltage MOSFET, TOLL
Datu lapa
Noliktavā neesošas preces izpildes laiks 14 Nedēļas
Min.: 4 000
Vair.: 2 000
Rullis: 2 000

Si SMD/SMT TOLL-8 N-Channel 1 Channel 600 V 47 A 84 mOhms 20 V 6 V 69 nC - 55 C + 150 C 431 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 27A, Single N-Channel High Voltage MOSFET, PDFN88
Datu lapa
Noliktavā neesošas preces izpildes laiks 14 Nedēļas
Min.: 6 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT PDFN88-4 N-Channel 1 Channel 600 V 27 A 110 mOhms 30 V 6 V 56 nC - 55 C + 150 C 178 W Enhancement Reel
Taiwan Semiconductor MOSFET 600V, 17A, Single N-Channel High Voltage MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 40 Nedēļas
Min.: 4 000
Vair.: 2 000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 17 A 110 mOhms - 30 V, 30 V 6 V 55 nC - 55 C + 150 C 73 W Enhancement Tube