Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

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Rezultāti: 52
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS

onsemi SiC Schottky Diodes 1200V 10A AUTO SIC SBD 3 484Ir noliktavā
Min.: 1
Vair.: 1

onsemi Kanālu draiveri SIC MOSFET DRIVER 11 603Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

onsemi SiC Schottky Diodes SIC TO263 SBD 10A 1 200V 3 633Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

onsemi SiC Schottky Diodes 650V 10A SIC SBD 2 597Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

onsemi SiC Schottky Diodes SIC TO220 SBD 8A 650V 1 316Ir noliktavā
Min.: 1
Vair.: 1

onsemi SiC Schottky Diodes SIC TO263 SBD 20A 1 200V 1 135Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

onsemi SiC Schottky Diodes SiC Diode 650V 4A 2 602Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


onsemi SiC Schottky Diodes 650V 10A SIC SBD GEN1.5 2 121Ir noliktavā
Min.: 1
Vair.: 1

onsemi SiC Schottky Diodes 1200V 20A AUTO SIC SBD 1 062Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800


onsemi SiC Schottky Diodes 1200V 10A SIC SBD 383Ir noliktavā
Min.: 1
Vair.: 1


onsemi SiC Schottky Diodes 650V 30A SIC SBD 620Ir noliktavā
Min.: 1
Vair.: 1

onsemi SiC Schottky Diodes Auto SiC Schottky Diode, 650 V 706Ir noliktavā
Min.: 1
Vair.: 1


onsemi SiC Schottky Diodes 1200V SiC SBD 40A 125Ir noliktavā
Min.: 1
Vair.: 1

onsemi SiC Schottky Diodes 650V 10A SIC SBD G EN1.5 1 443Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800


onsemi SiC Schottky Diodes 1200V 20A AUTO SIC SBD 311Ir noliktavā
Min.: 1
Vair.: 1


onsemi SiC Schottky Diodes 1200V 20A AUTO SIC SBD 348Ir noliktavā
Min.: 1
Vair.: 1

onsemi SiC Schottky Diodes 650V 6A SIC SBD 3 133Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

onsemi SiC Schottky Diodes 650V 12A SIC SBD 804Ir noliktavā
Min.: 1
Vair.: 1

onsemi SiC Schottky Diodes 1200V SiC SBD 20A 205Ir noliktavā
Min.: 1
Vair.: 1

onsemi SiC Schottky Diodes Auto SiC Schottky Diode, 650 V 480Ir noliktavā
Min.: 1
Vair.: 1


onsemi SiC MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A 1 182Ir noliktavā
Min.: 1
Vair.: 1


onsemi SiC Schottky Diodes 650V 10A SIC SBD G EN1.5 887Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

onsemi SiC Schottky Diodes SIC TO220 SBD 10A 650V 757Ir noliktavā
Min.: 1
Vair.: 1


onsemi SiC Schottky Diodes 650V 30A SIC SBD 867Ir noliktavā
Min.: 1
Vair.: 1


onsemi SiC Schottky Diodes 650V 10A SIC SBD 1 483Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500