MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Rezultāti: 41
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Tirdzniecības nosaukums Iepakojums
STMicroelectronics MOSFET N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 7 722Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 15 A 195 mOhms - 25 V, 25 V 3 V 29 nC - 55 C + 150 C 125 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package 3 154Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11 A 310 mOhms - 25 V, 25 V 3 V 19 nC - 55 C + 150 C 110 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package 1 426Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 130 mOhms - 25 V, 25 V 3 V 43 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 3 243Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 600 V 8 A 350 mOhms - 25 V, 25 V 3 V 19 nC - 55 C + 150 C 52 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 packag 1 460Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 12 A 260 mOhms - 25 V, 25 V 2 V 20 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package 912Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 130 mOhms - 25 V, 25 V 3 V 43 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 855Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 200 mOhms - 25 V, 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag 1 168Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 175 mOhms - 25 V, 25 V 3 V 29 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packag 1 235Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 260 mOhms - 25 V, 25 V 2 V 20 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package 1 756Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 570 mOhms - 30 V, 30 V 3 V 4 nC - 55 C + 150 C 85 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in D2PAK package 578Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 28 A 110 mOhms - 25 V, 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 2 200Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 21 A 115 mOhms - 25 V, 25 V 3 V 43 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package 2 122Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 440 mOhms - 25 V, 25 V 3 V 15 nC - 55 C + 150 C 109 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in TO-247 package 384Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 28 A 110 mOhms - 25 V, 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 packag Noliktavā neesošas preces izpildes laiks 16 Nedēļas
Min.: 600
Vair.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 58 mOhms - 25 V, 25 V 3 V 88 nC - 55 C + 150 C 360 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package 1 618Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 200 mOhms - 25 V, 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package 2 771Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 11 A 350 mOhms - 25 V, 25 V 4 V 120 nC - 55 C + 150 C 110 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP packag 1 332Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms - 25 V, 25 V 3 V 56 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package 3 085Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 130 mOhms - 25 V, 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package 2 400Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 93 mOhms - 25 V, 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 packag 1 096Ir noliktavā
270Paredzamais 17.02.2026
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 40 A 65 mOhms - 25 V, 25 V 3 V 70 nC - 55 C + 150 C 300 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 packag 772Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 60 mOhms - 25 V, 25 V 3 V 90 nC - 55 C + 150 C 360 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package 832Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 66 A 42 mOhms - 25 V, 25 V 3 V 121 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package 734Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 12 A 260 mOhms - 25 V, 25 V 3 V 20 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package 83Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 130 mOhms - 25 V, 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel