HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Tranzistoru veidi
Mainīt kategorijas skatu
Rezultāti: 28
Atlasīt Attēls Detaļas Nr.
 Raž.
Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS Produkta tips
Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Datu lapa
531Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Datu lapa
2 329Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 3 000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel


STMicroelectronics IGBT Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac
Datu lapa
564Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole
STMicroelectronics IGBT Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT
Datu lapa
461Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 1 000

IGBT Transistors Si SMD/SMT H2PAK-2
STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT
Datu lapa
293Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 60A trench gate field-stop IGBT
Datu lapa
1 096Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gte FieldStop IGBT 650V 80A
Datu lapa
4 465Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
Datu lapa
798Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 1 000

IGBT Transistors Si SMD/SMT

STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datu lapa
702Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 1 000

IGBT Transistors Si SMD/SMT D2PAK-3
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Datu lapa
90Ir noliktavā
600Paredzamais 24.08.2026
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 40A trench gate field-stop IGBT
Datu lapa
1 138Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 650V 40A Trench Gate Field-Stop IGBT
Datu lapa
600Ir noliktavā
600Paredzamais 15.06.2026
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
Datu lapa
406Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
Datu lapa
497Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Datu lapa
1Ir noliktavā
600Paredzamais 01.04.2026
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB series IGBT
Datu lapa
470Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
Datu lapa
848Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-3P-3
STMicroelectronics IGBT 650V 60A HSpd trench gate field-stop IGBT
Datu lapa
317Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT Trench gate H series 650V 80A HiSpd
Datu lapa
74Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-3P


STMicroelectronics IGBT Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Datu lapa
290Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-3PF
STMicroelectronics IGBT Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa
Datu lapa
42Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-4
STMicroelectronics IGBT 650V 60A HSpd trench gate field-stop IGB
Datu lapa
209Ir noliktavā
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT 600V 20A Hi Spd TrenchGate FieldStop
Datu lapa
Noliktavā neesošas preces izpildes laiks 14 Nedēļas
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 650V 60A Trench Gate Field-Stop IGBT
Datu lapa
Izpildes laiks 14 Nedēļas
Min.: 1
Vair.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
Datu lapa
Noliktavā neesošas preces izpildes laiks 14 Nedēļas
Min.: 600
Vair.: 600

IGBT Transistors Si Through Hole TO-247-3