Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

Rezultāti: 45
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Montāžas veids Iepakojums / korpusa Konfigurācija If - tiešā strāva Vrrm - atkārtots pretspriegums Vf - tiešais spriegums Ifsm - tiešā impulsstrāva IR - pretstrāva Minimālā darba temperatūra Maksimālā darba temperatūra Sērija
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
500Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-2 Single 10 A 1.2 kV 1.34 V 50 A 162 uA - 55 C + 175 C VS-4C10EP12LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 14.08.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-220AC-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07THM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
500Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15EP12L-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
500Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15EP12LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 14.08.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 14.08.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2LHM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-220AC-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12T-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-220AC-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12THM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 14.08.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 14.08.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-220AC-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07T-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-220AC-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07THM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
500Paredzamais 16.03.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-3 Common Cathode 10 A 650 V 1.3 V 60 A 50 uA - 55 C + 175 C VS-4C20CP07LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 16.03.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 16.03.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Paredzamais 16.03.2026
Min.: 1
Vair.: 1

Through Hole TO-220AC-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07T-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Paredzamais 16.03.2026
Min.: 1
Vair.: 1

Through Hole TO-220AC-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07THM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
500Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-3 Common Cathode 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C30CP07L-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
490Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-3 Common Cathode 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C30CP07LHM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
500Paredzamais 16.03.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-3 Single 30 A 650 V 1,33 V 180 A 125 uA - 55 C + 175 C VS-4C30E3P07L-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
465Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30EP12L-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
500Paredzamais 14.08.2026
Min.: 1
Vair.: 1

Through Hole TO-247AD-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30EP12LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 05.03.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Paredzamais 16.03.2026
Min.: 1
Vair.: 1

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2LHM3