OptiMOS™ 5 75V-100V Automotive MOSFETs

Infineon Technologies OptiMOS™ 5 75V to 100V Automotive MOSFETs are designed for high-performance applications and feature an extended qualification that goes beyond AEC-Q101 standards. The N-channel enhancement mode device combines a robust design with advanced technology, integrating Linear FET (LINFET) and low RDS(on) FET (ONFET) characteristics into a single package. This dual-gate configuration provides dedicated gate pins for each MOSFET, enhancing flexibility and control in circuit design. The Linear FET boasts an improved Safe Operating Area (SOA) and superior paralleling capabilities, ensuring reliable linear operation under varying conditions. The Infineon Technologies OptiMOS™ 5 75V to 100V MOSFETs operate within a wide -55°C to +175°C temperature range and are available in a PG-HSOF-8-2 package. 

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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Tirdzniecības nosaukums
Iepakojums
Infineon Technologies MOSFET MOSFET_(75V 120V(
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6 476Ir noliktavā
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Si SMD/SMT HDSOP-16 N-Channel 1 Channel 100 V 250 A 1.9 mOhms - 20 V, 20 V 3.8 V 128 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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6 515Ir noliktavā
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Si SMD/SMT TSDSON-8 N-Channel 1 Channel 80 V 20 A 30 mOhms - 20 V, 20 V 2 V 8.1 nC - 55 C + 175 C 30 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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Si SMD/SMT TSDSON-8 N-Channel 1 Channel 100 V 30 A 26 mOhms - 20 V, 20 V 1.7 V 9.5 nC - 55 C + 175 C 45.5 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(75V 120V(
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6 045Ir noliktavā
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Si SMD/SMT HSOF-8 N-Channel 1 Channel 80 V 200 A 2.3 mOhms - 20 V, 20 V 2.2 V 110 nC - 55 C + 175 C 200 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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1 617Ir noliktavā
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Si SMD/SMT N-Channel 1 Channel 100 V 180 A 2.9 mOhms - 20 V, 20 V 3.8 V 81 nC - 55 C + 175 C 221 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 150 A 3.5 mOhms - 20 V, 20 V 2.2 V 67 nC - 55 C + 175 C 166 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(75V 120V(
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Si SMD/SMT HDSOP-16-2 N-Channel 1 Channel 80 V 300 A 1.2 mOhms - 20 V, 20 V 3.8 V 178 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(75V 120V(
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2 503Ir noliktavā
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Si SMD/SMT N-Channel 1 Channel 100 V 210 A 2.4 mOhms - 20 V, 20 V 3.8 V 91 nC - 55 C + 175 C 238 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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990Ir noliktavā
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Si SMD/SMT HSOG-8 N-Channel 1 Channel 80 V 200 A 3.7 mOhms - 20 V, 20 V 2.2 V 110 nC - 55 C + 175 C 200 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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Si SMD/SMT HSOG-8 N-Channel 1 Channel 80 V 240 A 3 mOhms - 20 V, 20 V 2.2 V 130 nC - 55 C + 175 C 230 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(75V 120V(
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898Ir noliktavā
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Rullis: 2 000

Si SMD/SMT N-Channel 1 Channel 100 V 170 A 3.1 mOhms - 20 V, 20 V 3.8 V 67 nC - 55 C + 175 C 197 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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Si SMD/SMT N-Channel 1 Channel 80 V 220 A 2.1 mOhms - 20 V, 20 V 3.8 V 81 nC - 55 C + 175 C 211 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V,120V(
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Si SMD/SMT HSOF-8 N-Channel 1 Channel 80 V 165 A 2.9 mOhms - 20 V, 20 V 2.2 V 90 nC - 55 C + 175 C 167 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(75V 120V(
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2 460Ir noliktavā
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Si OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(75V 120V(
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Si OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(75V 120V(
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3 650Ir noliktavā
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Si SMD/SMT PG-HSOG-4-1 N-Channel 1 Channel 80 V 350 A 1.3 mOhms - 20 V, 20 V 3.8 V 138 nC - 55 C + 175 C 307 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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3 989Ir noliktavā
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Si SMD/SMT PG-HSOG-4-1 N-Channel 1 Channel 100 V 310 A 1.6 mOhms - 20 V, 20 V 3.8 V 142 nC - 55 C + 175 C 325 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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2 875Ir noliktavā
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Si SMD/SMT PG-HSOF-8-2 N-Channel 2 Channel 80 V 410 A 1.15 mOhms - 20 V, 20 V 3.3 V 178 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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8 387Ir noliktavā
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Si SMD/SMT HDSOP-16 N-Channel 1 Channel 100 V 300 A 1.5 mOhms - 20 V, 20 V 3.8 V 166 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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4 997Ir noliktavā
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Vair.: 1
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Si Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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4 950Ir noliktavā
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Si Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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9 333Ir noliktavā
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Si SMD/SMT TSDSON-8-33 N-Channel 1 Channel 100 V 40 A 14 mOhms - 20 V, 20 V 3 V 17 nC - 55 C + 175 C 68 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET_(75V 120V(
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2 128Ir noliktavā
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Si SMD/SMT HSOG-8 N-Channel 1 Channel 80 V 410 A 1.1 mOhms - 20 V, 20 V 3.8 V 178 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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1 504Ir noliktavā
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Vair.: 1
Rullis: 2 000

Si SMD/SMT N-Channel 1 Channel 80 V 250 A 1.8 mOhms - 20 V, 20 V 3.8 V 96 nC - 55 C + 175 C 238 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V(
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Si SMD/SMT TSDSON-8 N-Channel 1 Channel 80 V 100 A 5 mOhms - 20 V, 20 V 2.2 V 56 nC - 55 C + 175 C 125 W Enhancement Reel, Cut Tape, MouseReel