Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Visi rezultāti (39)

Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS
onsemi MOSFET SuperFET3 650V 67 mOhm 4 573Ir noliktavā
Min.: 1
Vair.: 1


onsemi MOSFET SF3 FRFET 650V 27MOHM 1 269Ir noliktavā
Min.: 1
Vair.: 1

onsemi MOSFET NChan Sngle 150V 16A PowerTrench MOSFET 68 931Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

onsemi SiC Schottky Diodes SIC TO220 SBD 8A 650V 1 316Ir noliktavā
Min.: 1
Vair.: 1

onsemi Operacionālie pastiprinātāji – operacionālie pastiprinātāji R2R OUTPUT SINGLE AMPLIFIER 19 446Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


onsemi MOSFET SF3 FRFET 650V 82MOHM 2 279Ir noliktavā
Min.: 1
Vair.: 1

onsemi MOSFET N-Channel Dual CoolTM 88 PowerTrench MOSFET 150 V, 99 A, 6.5 mOhm 1 956Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

onsemi Strāvas sensoru pastiprinātāji Currnet Sense Amp 26V G=100 5 850Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


onsemi MOSFET izejas optiskie savienotāji Input LED drive 2.5A gate driver 848Ir noliktavā
Min.: 1
Vair.: 1

onsemi Kanālu draiveri HIGH CURRENT IGBT GATE DRIVER 1 807Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500


onsemi MOSFET SUPERFET3 650V TO247 N-CHANNEL 450Ir noliktavā
Min.: 1
Vair.: 1

onsemi SiC Schottky Diodes SIC TO220 SBD 10A 650V 757Ir noliktavā
Min.: 1
Vair.: 1


onsemi Kanālu draiveri HIGH CURRENT IGBT GATE DR 2 576Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

onsemi Kanālu draiveri HIGH CURRENT IGBT GATE DRIVER 5 000Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

onsemi SiC Schottky Diodes 650V 16A SIC SBD 263Ir noliktavā
Min.: 1
Vair.: 1

onsemi Loģiskās izvades optrons 3.3V/5V, 10Mbit/sec Logic gate SOP 5 3 198Ir noliktavā
Min.: 1
Vair.: 1

onsemi Kanālu draiveri HIGH CURRENT IGBT GATE DRIVER 2 097Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

onsemi MOSFET 100V/20V Nch 2xCool PowerTrench MOSFET 6 741Ir noliktavā
6 000Paredzamais 07.04.2026
Min.: 1
Vair.: 1
Rullis: 3 000

onsemi SiC Schottky Diodes 1200V SiC SBD 8A 590Ir noliktavā
Min.: 1
Vair.: 1

onsemi MOSFET SuperFET3 650V 70mOhm 1 082Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800


onsemi MOSFET 650V N-Channel SuperFET III MOSFET 125Ir noliktavā
Min.: 1
Vair.: 1


onsemi MOSFET 650V 44A N-Channel SuperFET MOSFET 1 182Ir noliktavā
Min.: 1
Vair.: 1

onsemi MOSFET -150V P-Channel QFET 11 962Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

onsemi MOSFET 150V/20V N Channel PowerTrench MOSFET 1 723Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

onsemi MOSFET N-Channel Dual Cool 88 PowerTrench MOSFET 100 V, 162 A, 2.95 mO 1 837Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000