D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.

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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Iepakojums
IXYS MOSFET N-CH MOSFETS (D2) 1000V 6A
Datu lapa
3 894Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms - 20 V, 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS 500V 800MA
Datu lapa
21 864Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 800 mA 4.6 Ohms - 20 V, 20 V 4.5 V 12.7 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 3A
Datu lapa
854Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 3 A 6 Ohms - 20 V, 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET D2 Depletion Mode Power MOSFET
Datu lapa
977Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 10 A 1.5 Ohms - 20 V, 20 V 4.5 V 200 nC - 55 C + 150 C 695 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 3A
Datu lapa
3 724Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 3 A 1.5 Ohms - 20 V, 20 V 4.5 V 40 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET DiscMosfet N-CH Depl Mode-D2 TO-263D2
Datu lapa
695Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms - 20 V, 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube

IXYS MOSFET N-CH 500V 16A MOSFET
Datu lapa
1 139Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 300 mOhms - 20 V, 20 V 4 V 199 nC - 55 C + 150 C 695 W Depletion Tube

IXYS MOSFET N-channel MOSFET
Datu lapa
311Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 2 A 6.5 Ohms - 20 V, 20 V 4.5 V 110 nC - 55 C + 150 C 568 W Enhancement Tube
IXYS MOSFET TO263 1KV 3A N-CH DEPL
Datu lapa
577Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT TO-263HV-3 N-Channel 1 Channel 1 kV 3 A 6 Ohms - 20 V, 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube

IXYS MOSFET N-CH MOSFETS (D2) 500V 6A
Datu lapa
287Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 6 A 550 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 150 C 300 W Depletion Tube

IXYS MOSFET 6Amps 1000V
Datu lapa
381Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms - 20 V, 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 6A
Datu lapa
451Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 6 A 550 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 1.6A
Datu lapa
583Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 1.6 A 10 Ohms - 20 V, 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube

IXYS MOSFET DiscMosfet N-CH Depl Mode-D2 TO-247AD
Datu lapa
456Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.5 Ohms - 20 V, 20 V 4.5 V 200 nC - 55 C + 150 C 695 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 800MA
Datu lapa
1 882Ir noliktavā
200Paredzamais 03.04.2026
Min.: 1
Vair.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 800 mA 21 Ohms - 20 V, 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Enhancement Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 800MA
Datu lapa
1 796Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 1.6 A 10 Ohms - 20 V, 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 6A
Datu lapa
837Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 6 A 550 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 150 C 300 W Depletion Tube

IXYS MOSFET N-CH 200V 16A MOSFET
Datu lapa
608Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 16 A 80 mOhms - 20 V, 20 V 4.5 V 208 nC - 55 C + 150 C 695 W Depletion Tube
IXYS MOSFET N-CH MOSFETS 1000V 800MA
Datu lapa
1 801Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 800 mA 21 Ohms - 20 V, 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 3A
Datu lapa
617Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 3 A 6 Ohms - 20 V, 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 6A
Datu lapa
441Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms - 20 V, 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET 1700V 2A
Datu lapa
119Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.7 kV 2 A 6.5 Ohms - 20 V, 20 V 4.5 V 110 nC - 55 C + 150 C 568 W Depletion Tube
IXYS MOSFET 8mAmps 1000V
Datu lapa
6 907Ir noliktavā
Min.: 1
Vair.: 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 800 mA 21 Ohms - 20 V, 20 V 2 V 14.6 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 1.6A
Datu lapa
5 894Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 1.6 A 10 Ohms - 20 V, 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET DiscMosfet N-CH Depl Mode-D2 TO-263D2
Datu lapa
441Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT TO-263HV-3 N-Channel 1 Channel 1 kV 800 mA 21 Ohms - 20 V, 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Depletion Tube