HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Rezultāti: 720
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Kvalifikācija Tirdzniecības nosaukums Iepakojums
IXYS MOSFET 10 Amps 800V 1.1 Rds 8 999Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET 250V UltraJunc X3 Pwr MOSFET 879Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 240 A 4.1 mOhms - 20 V, 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 1 148Ir noliktavā
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms - 30 V, 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET TO220 200V 72A N-CH X3CLASS 3 528Ir noliktavā
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET 230A 200V 907Ir noliktavā
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Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 230 A 7.5 mOhms - 20 V, 20 V 5 V 358 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube

IXYS MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A 3 347Ir noliktavā
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 400 A 2.3 mOhms - 20 V, 20 V 4 V 420 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube

IXYS MOSFET 52 Amps 300V 0.066 Rds 3 258Ir noliktavā
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 52 A 73 mOhms - 20 V, 20 V 5 V 110 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1 542Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TrenchT2 HiperFETs Power MOSFET 158Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 400 A 2.3 mOhms - 20 V, 20 V 2 V 420 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube
IXYS MOSFET TO247 650V 24A N-CH X2CLASS 586Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 145 mOhms - 30 V, 30 V 3 V - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 360Amps 55V 358Ir noliktavā
300Paredzamais 20.04.2026
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Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 55 V 360 A 2.4 mOhms - 20 V, 20 V 2 V 330 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A 66Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 44 A 220 mOhms - 30 V, 30 V 3.5 V 264 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFET TO263 300V 26A N-CH X3CLASS 2 204Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 300 V 26 A 66 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET Trench HiperFET Power MOSFET 169Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 94 A 36 mOhms HiPerFET Tube
IXYS MOSFET 1000V 32A TO-264 Power MOSFET 195Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 186Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/34A Ultra Junction X2 660Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET PolarP2 Power MOSFET 1 148Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 52 A 120 mOhms - 30 V, 30 V 4.5 V 113 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 175Ir noliktavā
125Paredzamais 15.04.2026
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Vair.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 360 A 4 mOhms - 20 V, 20 V 2.5 V 715 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube
IXYS MOSFET TO220 300V 56A N-CH X3CLASS 519Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 36A 1 650Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 36 A 170 mOhms - 30 V, 30 V 5 V 93 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 646Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 mW Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A 710Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 80 A 65 mOhms - 30 V, 30 V 6.5 V 200 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET 251Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 70 mOhms - 30 V, 30 V 5 V 190 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET 86 Amps 200V 29 Rds 749Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 86 A 29 mOhms - 30 V, 30 V 5 V 90 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube